Tunable SiO2 to SiOxCyH films by ozone assisted chemical vapor deposition from tetraethylorthosilicate and hexamethyldisilazane mixtures

Silica and silica-based materials with tunable functionalities are frequently encountered in low-k material applications, porous membranes, microelectonic devices. In the present study, an innovative O2/O3 assisted CVD process for deposition of such films at moderate temperature is presented, based on a dual precursor chemistry from hexamethyldisilazane (HMDS) tetraethyl orthosilicate (TEOS). Films carbon content were obtained through variation HMDS flow ratio. A comprehensive FT-IR study reveals transition SiOxCyH type film containing -CH3 moieties, to methyl-free SiOx increase temperature. At same time water contact angle 81.0° 400 °C decreased 52.8° 550 °C, related absence methyl moieties latter. Ion beam analysis (IBA) confirms lack when temperatures equal or exceed 500 °C. The resistance liquid corrosion investigated as function temperature; low Pliskin etching rate 15 Å.s−1, this value increasing 60 Å.s−1 SiOxCy:CH3 produced lower temperatures. It found that addition TEOS can be utilized modulate composition by such, tune functional properties, particular its rate, opening way development new sacrificial films.